Title: Electromagnet-piezo-resistance type micro mechanical resonant beam structure
Application Number: 200610114275 Application Date: 2006.11.03
Publication Number: 1945214 Publication Date: 2007.04.11
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: G01D5/12;G01H11/00
Applicant(s) Name: Beijing Univ. of Aeronautics and Astronautics Address:
Inventor(s) Name: Fan Shangchun;Xing Weiwei;Cai Chenguang
Attorney & Agent: jiayu zhong luji
Abstract:
    The electromagnetic-piezoresistance type micro mechanical resonant beam structure has single beam with ends fixed on elastic base body and set inside magnetic field in the width direction, and the natural frequency of single beam is controlled by the deformation of the base body. The single beam includes a beam body and a resistance layer, and the resistance layer includes a piezoresistance film and a conducting film. The beam body is made of doped [100] monocrystalline silicon, the piezoresistance film is N-type epitaxial film covering the beam body surface completely, and the conducting film is heavy doped epitaxial film or sputtered metal film covering the middle part of the piezoresistance film. The resistance layer has both electromagnetic excitation and piezoresistance pick-up function, simplified monocrystalline silicon integral structure, and the single beam has controlled doped layers with controlled prestress and structural stability.
Time: 8
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