Title: Method of surface treating substrates and method of manufacturing III-V compound semiconductors
Application Number: 200610094016 Application Date: 2006.06.21
Publication Number: 1885499 Publication Date: 2006.12.27
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/306,H01L33/00,B08B3/08
Applicant(s) Name: Sumitomo Electric Industries Address:
Inventor(s) Name: Nishiura Takayuki
Attorney & Agent: wang haichuan fan weimin
Abstract:
     Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which the substrate made of a Group III-V semiconductor compound is rendered stoichiometric and microscopic roughness on the surface following epitaxial growth is reduced. The methods include preparing a substrate made of a Group III-V semiconductor compound (S10), and cleaning the substrate with a cleaning solution whose pH has been adjusted to an acidity of 2 to 6.3 inclusive and to which an oxidizing agent has been added (S20).
Time: 17
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