Title: Method for forming film pattern and method for manufacturing electronic device
Application Number: 200610151641 Application Date: 2006.09.07
Publication Number: 1943879 Publication Date: 2007.04.11
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: B05D1/00;B05C11/10;B05C11/02;B05D7/24;H05B33/10;G09F9/00
Applicant(s) Name: Seiko Epson Corp. Address:
Inventor(s) Name: Sakai Hirofumi;Tanaka Takaya
Attorney & Agent: wanghui min
Abstract:
    The present invention relates to a method for forming a film pattern. The method for forming a film pattern F made of a high-performance material by arranging a functional fluid L on a base substrate P and drying the functional fluid L, the functional fluid being the high-performance material dissolved or dispersed in a solvent is provided. The method includes: forming liquid reception portions PE, PD in an effective area TE and a non-effective area T1, T2, T3 of the base substrate P on which the film pattern F is to be formed, the non-effective area T1, T2, T3 surrounding the effective area TE; arranging the functional fluid L in the liquid reception portions PE formed in the effective area TE; and arranging the functional fluid L or the solvent in the liquid reception portions PD formed in the non-effective area T1, T2, T3, wherein, in the non-effective area T1, T2, T3, larger amounts of the solvent are arranged in the liquid reception portions PD in areas that are more distant from a center C of the effective area TE. The present invention provided a method for forming a film pattern which can form symmetrical film pattern on the substrate.
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