Title: Device based on partially oxidized porous silicon and method for the production thereof
Application Number: 03808648 Application Date: 2003.03.28
Publication Number: 1646224 Publication Date: 2005.07.27
Approval Pub. Date: 2007.06.06 Granted Pub. Date: 2007.06.06
International Classifi-cation: B01L3/00;G02B1/10;G02B6/12;H01L21/762;H01L21/306;G01N33/543
Applicant(s) Name: Infineon Technologies AG Address:
Inventor(s) Name: Dertinger Stephan;Fritz Michaela;Fuchs Karin;Haned
Attorney & Agent: wu limeng zhang zhicheng
Abstract:
    The invention relates to a device comprising a planar macroporous support material based on silicon, which has a plurality of pores with a diameter ranging from 500 nm to 100 m, distributed over at least one surface region, said pores extending in a continuous manner from one surface to the opposite surface of the support material. Said device comprises at least one region containing one or several pores with pore walls consisting of Si02, said region being surrounded by a frame that is arranged substantially parallel to the longitudinal axes of the pores, is open in the direction of the surface of the support material and consists of walls with a silicon core. The silicon core changes to silicon dioxide over the cross-section towards the exterior face of the walls that form the frame. The invention also relates to a method for producing said device. The inventive device is suitable for use as a base for a biochip base module in methods for detecting biochemical (bonding) reactions, in addition to analysing for this purpose enzymatic reactions, nucleic acid hybridizations, protein-protein interactions and other bonding reactions in the domain of genome, proteome or active substance research in the fields of biology and medicine.
Time: 10
<- Previous Patent:Tear film osmometry   |  Next Patent:Closed electroosmosis drive metho... ->