Title: EUV light source, EUV exposure system, and production method for semiconductor device
Application Number: 200580020398 Application Date: 2005.06.22
Publication Number: 1973357 Publication Date: 2007.05.30
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/027;G03F7/20;G21K5/02;G21K5/08;H05G2/00
Applicant(s) Name: Nippon Kogaku KK Address:
Inventor(s) Name: Shiraishi Masayuki
Attorney & Agent: shouning
Abstract:
    An Sn-Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank 4. The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle 1, so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle 1 disposed inside a vacuum chamber 7. The liquid-form Sn alloy that is caused to jet from the nozzle 1 has a spherical shape as a result of surface tension, and forms a target 2. Laser light generated by an Nd:YAG laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and introduced into the vacuum chamber 7. The target 2 that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.
Time: 14
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