Title: EUV light source, EUV exposure equipment and semiconductor device manufacturing method
Application Number: 200580020010 Application Date: 2005.06.22
Publication Number: 1969372 Publication Date: 2007.05.23
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/027;G03F7/20;G21K5/02;G21K5/08;H05G2/00
Applicant(s) Name: Nippon Kogaku KK Address:
Inventor(s) Name: Murakami Katsuhiko
Attorney & Agent: shouning
Abstract:
    In a heated tank (4), a liquid having Sn solid fine particles dispersed in a resin is stored. The resin pressurized by a pressurizing pump is lead to a nozzle (1), and the resin in a liquid state is jetted from a leading edge of the nozzle (1) provided in a vacuum chamber (7). The liquid in a liquid state jetted from the nozzle (1) forms a spherical shape by surface tension, cooled in vacuum to be solidified, and becomes a solid target (2). The vacuum chamber (7) is provided with a laser introducing window (10) for introducing laser beams. The laser beams emitted from a laser light source (8) arranged outside the vacuum chamber (7) are collected by a lens (9), introduced into the vacuum chamber (7) to have the target in a plasma state, and EUV light is generated.
Time: 11
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