Title: Electrostatic discharge protection circuit
Application Number: 200510103662 Application Date: 2005.09.05
Publication Number: 1929127 Publication Date: 2007.03.14
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L23/60;H05F3/00
Applicant(s) Name: Silicon Integrated Systems Corporation Address:
Inventor(s) Name:
Attorney & Agent: chenliang
Abstract:
    This invention discloses one static discharging protection circuit, which comprises one bump MOS circuit and one trigger current generation circuit, wherein, bump MOS circuit is to be used as static current first discharge path and the trigger current generation circuit is to generate trigger current to conduct bump MOS circuit to form first discharge path current.
Time: 10