Title: Esd protection device in high voltage and manufacturing method for the same
Application Number: 200610101383 Application Date: 2006.07.18
Publication Number: 1901192 Publication Date: 2007.01.24
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L27/02;H01L23/60;H01L21/822;H05F3/02
Applicant(s) Name: Mediatek Inc. Address:
Inventor(s) Name: Yu Ding-jeng;Cheng Tao;Chiu Chao-chih
Attorney & Agent: tian shu
Abstract:
    Electrostatic discharge (ESD) protection device in high voltage and the relevant manufacturing method is disclosed. The mentioned ESD protection device is disposed to bridge a ground and an input connected with an inner circuit to be protected. In which, the ESD protection device for high voltage comprises at least one PNP transistor and at least one diode connected in parallel, and an ESD discharging path is formed thereby. The PNP transistor is formed with an adjacent heavily doped P-type semiconductor zone (P ), lightly doped N-type semiconductor zone (N-), and a P-type semiconductor substrate. The diode is formed with an adjacent lightly doped N-type semiconductor zone and a light doped P-type semiconductor zone.
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