| Title: | Method for producing microphone unit, thermal-oxidative layer and low-stress structural layer | ||
| Application Number: | 200510108811 | Application Date: | 2005.09.30 |
| Publication Number: | 1942023 | Publication Date: | 2007.04.04 |
| Approval Pub. Date: | Granted Pub. Date: | ||
| International Classifi-cation: | H04R31/00;B81C1/00;H01L21/00 | ||
| Applicant(s) Name: | Tanwei Science and Technology Co., Ltd. | Address: | |
| Inventor(s) Name: | |||
| Attorney & Agent: | taofeng bei houyu | ||
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Abstract: |
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| The method comprises: providing a substrate; forming multi trenches on the frond face of the substrate; forming a thermal oxidation layer on the inner wall and the front face of the substrate, and filling up the trenches; forming a first structure layer on the thermal oxidation layer, and doping in the first structure layer; forming a second structure layer on the first structure layer on the second structure and making annealing practice in order to reduce the stress between the first structure layer and the second structure layer; defining the pattern of first structure layer and the second structure layer in order to form multi membranes; fixing the second structure layer in the bear substrate, and forming multi cavities corresponding to the membranes on the back face of the substrate by using deep etching technology. | |||
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| Time: | 6 | ||
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