Title: Surface acoustic wave device and manufacturing method thereof
Application Number: 200610153850 Application Date: 2006.09.13
Publication Number: 1933327 Publication Date: 2007.03.21
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H03H9/25
Applicant(s) Name: Seiko Epson Corp. Address:
Inventor(s) Name:
Attorney & Agent: huanglun wei
Abstract:
    A surface acoustic wave device and its fabrication process are disclosed. To achieve a small and thin surface acoustic wave device. The surface acoustic wave device comprises a surface acoustic wave chip having an IDT electrode formed on the major surface of a piezoelectric substrate, electrodes taken out from the IDT electrode, a metal joint formed on the major surface of the piezoelectric substrate along the periphery thereof; and a cover substrate composed of an insulating material and having connection electrodes connected with the take-out electrodes external electrodes, and through electrodes for connecting the connection electrodes and the external electrodes. In a space formed by bonding the surface acoustic wave chip and the cover substrate, the IDT electrode and the take-out electrodes are sealed hermetically, and an auxiliary portion having such a height as the cover substrate does not touch the IDT electrode even if the piezoelectric substrate or the cover substrate is deformed is formed on the major surface of a piezoelectric substrate.
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