Title: Semiconductor device and oscillator
Application Number: 200610107873 Application Date: 2006.07.27
Publication Number: 1905361 Publication Date: 2007.01.31
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H03H3/00;H01F17/00;H01G17/00
Applicant(s) Name: Seiko Epson Corp. Address:
Inventor(s) Name: Takagi Shigekazu
Attorney & Agent: huang lunwei
Abstract:
    Provided is a semiconductor device, which has high Q value and a good characterics of the phase noise. A semiconductor device includes a semiconductor substrate including an active element or an integrated circuit and a plurality of connection electrodes to be electrically connected to the integrated circuit; a first resin layer formed on a surface of the semiconductor substrate on which the connection electrodes are formed in such a manner avoiding the connection electrodes; a connection wiring layer formed between the semiconductor substrate and the first resin layer and connected to one of the plurality of connection electrodes; a Cu wiring layer connected at one end thereof to the connection wiring layer and formed on the surface of the first resin layer; a passive element composed of the connection wiring layer and the Cu wiring layer; a second resin layer for covering a surface of the helix inductance; and an external terminal electrically connected to some of the plurality of connection electrodes and formed such that a portion of the second resin layer protrudes from the second resin layer.
Time: 10