Title: Semiconductor device and driving method thereof
Application Number: 200610009357 Application Date: 2006.02.28
Publication Number: 1828912 Publication Date: 2006.09.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L27/12,H03D9/00
Applicant(s) Name: Semiconductor Energy Lab Address:
Inventor(s) Name: Kato Kiyoshi
Attorney & Agent: wu limeng wang yong
Abstract:
     The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal.
Time: 11
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