Title: Mixer made from MOS field effect transistor in low voltage and low power consumption
Application Number: 200510011928 Application Date: 2005.06.14
Publication Number: 1697311 Publication Date: 2005.11.16
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H03D7/12
Applicant(s) Name: Beijing Univ. Address: 100871
Inventor(s) Name: Huang Ru, Liao Huailin, Song Ruifeng
Attorney & Agent: jia xiaoling
Abstract:
     The mixer includes metal oxide semiconductor field effect transistor (MOSFET) parts, resistances, inductances and capacitances. MOSFET includes one or more dual-gate field effect transistors (FET). Radio frequency signal and signal of local oscillation are applied to front gate / back gate of dual-gate FET. Certain offset voltage is added to MOSFET part in order to guarantee the part operates at saturation region. Load is resistances, inductances and capacitances or any combination among them. Since radio frequency signal and signal of local oscillation are input at same time, mixed under low voltage. In favor of operation at low voltage and low power consumption, the invention is applicable to deep sub micro RF CMOS circuit.
Time: 19
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