Title: CMOS inductance capacitance resonant cavity voltage-controlled oscillator with ultra-low voltage
Application Number: 200510086991 Application Date: 2005.11.25
Publication Number: 1767371 Publication Date: 2006.05.03
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H03B5/12,H03L7/099
Applicant(s) Name: Tsinghua University Address: 100084
Inventor(s) Name: Mao Xiaojian, Yang Huazhong
Attorney & Agent:
Abstract:
     The invention is in the field of voltage-controlled oscillator technology. It is characterized in that it connects the two N-type MOS pipe substrates with the anode polar and the cathode polar of the power to reduce the transistor valve value to achieve the super low voltage inductance capacity oscillator; one connecting point of the interconnected inductance capacity is connected with the two N-type MOS pipe substrates. The working voltage can lower to 0.4V and the average current can be 2.6mA on the SMIC 0.18 mm craft condition.
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