Title: Oscillator
Application Number: 200580025371 Application Date: 2005.07.13
Publication Number: 1989610 Publication Date: 2007.06.27
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/8238;H03B5/12;H01L27/092;H03K3/354
Applicant(s) Name: Matsushita Electric Ind Co., Ltd. Address:
Inventor(s) Name: Inoue Akira;Katayama Kouji;Takagi Takeshi
Attorney & Agent: longchun
Abstract:
    In the inventive oscillator, field effect transistors (12,13) included therein as amplifying elements are ones of embedded channel type, each of which has a body region formed on a semiconductor substrate; source and drain regions formed on the body region and having different conductivity types from the body region; an embedded channel region formed between the source and drain regions; and a gate electrode formed over the embedded channel region via a gate insulating film. Body terminals (b12,b13), electrically connected to the body region, each are further connected to a power supply wire to which a power supply potential (Vdd) is applied.
Time: 15