Title: Self-powered structure in use for sensor
Application Number: 200610095090 Application Date: 2006.09.01
Publication Number: 1917352 Publication Date: 2007.02.21
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H02N2/00;H02N2/02;H02N2/18
Applicant(s) Name: Chongqing Univ Address:
Inventor(s) Name: Li Ping;Wen Yumei;Bian Leixiang;Zheng Min;Yang Fan
Attorney & Agent: zhou shaogong
Abstract:
    The invention comprises a magnetostriction layer and a piezoelectric layer. It features adding an amplification unit between the magnetostriction layer and the piezoelectric layer. By the invention, the magnetoelectricity conversion efficiency can be increased. The self-powered device thereof can be used in the micro-dissipation circuit.
Time: 7
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