Title: Switch power supply, semiconductor appatatus and controlling method
Application Number: 200610139814 Application Date: 2006.09.21
Publication Number: 1937383 Publication Date: 2007.03.28
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H02M3/28;H02H7/12
Applicant(s) Name: Matsushita Electric Ind Co., Ltd. Address:
Inventor(s) Name:
Attorney & Agent: wanghui min
Abstract:
    A plurality of arrangements for detecting an overload of energy supplied to an output part enables selecting latch-off or auto-recovery overload protection by the operation of a switching device. When the drain current peak of the switching device exceeds a predetermined level denoting an overload, the FB pin voltage also rises to latch off, and when the drain current peak then reaches a maximum level, the CC pin voltage drops to a predetermined level and limits the oscillation period of the switching device because output power cannot be increased even if the load increases further. Latch-off overload protection can be applied when the drain current peak exceeding a predetermined level is detected, and auto-recovery overload protection can be applied when the CC pin voltage is detected to drop to a predetermined level.
Time: 12
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