Title: Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
Application Number: 200610171711 Application Date: 2006.12.15
Publication Number: 1983748 Publication Date: 2007.06.20
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/028;H01S5/343;H01S5/323;H01L33/00
Applicant(s) Name: Sharp KK Address:
Inventor(s) Name: Kamikawa Takeshi;Kawaguchi Yoshinobu
Attorney & Agent: lixiang lan
Abstract:
    There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
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