Title: Semiconductor laser device and method for manufacturing the same
Application Number: 200610153128 Application Date: 2006.12.07
Publication Number: 1979982 Publication Date: 2007.06.13
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/16;H01S5/22;H01S5/34;H01S5/00
Applicant(s) Name: Matsushita Electric Ind Co., Ltd. Address:
Inventor(s) Name: Kashima Takayuki;Makita Kouji;Yoshikawa Kenji
Attorney & Agent: hujian xin
Abstract:
    A semiconductor laser device includes: a semiconductor substrate (1) of a first conductive type; an envelopping layer (3) of the first conductive type provided on the semiconductor substrate; an active layer (4) provided on the envelopping layer of the first conductive type; a first envelopping layer (5) of a second conductive type provided on the active layer; a second envelopping layer (7) of the second conductive type provided on the first envelopping layer and forming a vertebral shape wave-guide extended along a resonator direction; a contact layer (9) of the second conductive type provided on the second envelopping layer of the second conductive type; an end face window structure (11), wherein the active layer region in which impurities are diffused to an end face portion of the resonator direction has a power band clearance larger than a gain region of other portions besides the end face portion; in the envelopping layers of the second conductive type, the gain region has an impurity concentration equal to or larger than the impurity concentration of the region of the end face window structure. An end face window structure having few changes of refractive index can be formed, which has a higher resistance and is able to restrain a Zn diffusion of the resonator direction.
Time: 11