Title: Nitride semiconductor laser element and fabrication method thereof
Application Number: 200610153153 Application Date: 2006.12.05
Publication Number: 1979984 Publication Date: 2007.06.13
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/22;H01S5/02;H01S5/00
Applicant(s) Name: Sharp KK Address:
Inventor(s) Name: Ohmi Susumu;Takatani Kunihiro;Yamashita Fumio;Tane
Attorney & Agent: chenrui feng
Abstract:
    On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
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