Title: Semiconductor light-emitting device and its production method
Application Number: 200610163999 Application Date: 2006.11.24
Publication Number: 1971958 Publication Date: 2007.05.30
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00;H01S5/343
Applicant(s) Name: Sharp KK Address:
Inventor(s) Name: Hooper Stewart E.;Bousquet Valerie
Attorney & Agent: zhangxin
Abstract:
    A semiconductor light-emitting device is fabricated in a nitride materials system and has an active region comprising two or more quantum well layers. Each quantum well layer is separated from a neighbouring quantum well layer by a respective barrier layer. The or each barrier layer has a thickness that is at least 13 times as great as the thickness of any one of the quantum well layers. This increases the output power of the device.
Time: 11