Title: Process for producing a free-standing III-N layer, and free-standing III-N substrate
Application Number: 200610162841 Application Date: 2006.11.24
Publication Number: 1988109 Publication Date: 2007.06.27
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/20;H01L33/00;H01S5/02
Applicant(s) Name: Freiberger Compound Mat GmbH Address:
Inventor(s) Name: Leibiger Gunnar;Habel Frank;Eichler Stefan
Attorney & Agent: caisheng wei
Abstract:
    A process for producing a free-standing III-N layer, where III denotes at least one element from group III of the periodic system, selected from Al, Ga and In, comprises depositing on a Li(Al,Ga)Ox substrate, where x is in a range between 1 and 3 inclusive, at least one first III-N layer by means of molecular beam epitaxy. A thick second III-N layer is deposited on the first III-N layer by means of a hydride vapor phase epitaxy. During cooling of the structure produced in this way, the Li(Al,Ga)Ox substrate completely or largely flakes off the III-N layers, or residues can be removed if necessary, by using etching liquid, such as aqua regia. A free-standing III-N substrate being substantially free of uncontrolled impurities and having advantageous properties is provided.
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