Title: High-power semiconductor laser polarization coupling apparatus and its method
Application Number: 200610114667 Application Date: 2006.11.21
Publication Number: 1972046 Publication Date: 2007.05.30
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/06;H01S5/40;H01S5/00;G02B6/27
Applicant(s) Name: Beijing University of Technology Address:
Inventor(s) Name: Zhang Hui;Wang Zhiyong;Zhang Liang;Ding Peng;Zuo T
Attorney & Agent: liuping
Abstract:
    This invention relates to one large power semiconductor laser bias couple device and its method, wherein, the invention device comprises two large power semiconductor laser for laser array one and two with same output power and diffusion angle, wherein, the semi-wavelet is plugged with semiconductor laser array one and bias prism lens; the semi-wavelet and semiconductor array one send vertical laser; the regular light from semi-wavelet and laser from couple device go into scrim lens two adjacent incidence surfaces.
Time: 5