Title: A ZnO-based quantum dot laser diode and its manufacture method
Application Number: 200610154666 Application Date: 2006.11.14
Publication Number: 1953284 Publication Date: 2007.04.25
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/347
Applicant(s) Name: Zhejiang University Address:
Inventor(s) Name: Ye Zhizhen;Lu Yangfan
Attorney & Agent: hange mei
Abstract:
    The invention relates to a ZnO-base quantum laser diode, which uses ZnO base, deposits n-ZnO film, n-Zn
Time: 6