Title: Group III nitride semiconductor light emitting device
Application Number: 200610146401 Application Date: 2006.11.13
Publication Number: 1967954 Publication Date: 2007.05.23
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/343;H01S5/323;H01L33/00;H01L27/15
Applicant(s) Name: Matsushita Electric Ind Co., Ltd. Address:
Inventor(s) Name: Sugiura Katsumi
Attorney & Agent: ligui liang
Abstract:
    A group III nitride semiconductor light emitting device with the low valve value current and the high reliability according to the present invention includes an immediate layer formed of AlxGa1-x-yInyN (0
Time: 12
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