Title: ZnO base LED and its preparing method
Application Number: 200610154474 Application Date: 2006.11.02
Publication Number: 1945867 Publication Date: 2007.04.11
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00;H01S5/34
Applicant(s) Name: Zhejiang Univ. Address:
Inventor(s) Name: Zhu Liping;Gu Xiuquan;Ye Zhizhen;Zhao Binghui
Attorney & Agent: hange mei
Abstract:
    This invention relates to ZnO base LED and its preparation method , which applies a pulse laser deposition method to deposit ZnO homogeneity buffer layer, an n-type ZnO contact layer, an n-type Znl-xMgxo layer, multilayer Znl-xMgxO/ZnO multi-quanta trap structure layer, a p-type Znl-xMgxO layer, a p-type ZnO contact layer and multilayer Znl-xMgyO distributed Bragg reflection mirror structure layer on the substrate orderly, then applies a magnet control sputter method to deposit a first electrode parallel to the n-type ZnO-xMgxO on the n-type contact layer and a second electrode parallel to the multilayer Znl-xMgO/Znl-yMgyO distributed Bragg reflection mirror structure on the p-type ZnO contact layer.
Time: 7