Title: Quantum trap structure of semiconductor light-emitting diode for increasing internal quantum efficiency
Application Number: 200610124789 Application Date: 2006.10.18
Publication Number: 1937267 Publication Date: 2007.03.28
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00;H01S5/343
Applicant(s) Name: Huacan Photoelectric Co., Ltd., Wuhan Address:
Inventor(s) Name:
Attorney & Agent: zhubi wu
Abstract:
    Characters of the disclosed structure of quanta trap are that through tunneling barrier layer 5 with high tunneling probability, home position electron capture layer 3 or home position hole capture layer 4 are connected to quanta trap layer 2; layres 1, 3 or 4, 5 and 2 constitute a cycle to carry out activity repeatedly. Number of cycles can be selected from 1 to 10; both of upmost and undermost layers are barrier layers 1; thickness of home position electron capture layer 3 or home position hole capture layer 4 is between 1nm to 3nm. Being as active layer, the structure can increase probability of capturing electrons or holes so as to raise internal quantum efficiency of gallium nitride based light emitting diode of blue green light.
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