Title: Nitride semiconductor photogenerator and method for manufacturing same
Application Number: 200610142391 Application Date: 2006.10.11
Publication Number: 1949606 Publication Date: 2007.04.18
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/00;H01L33/00
Applicant(s) Name: Tokyo Shibaura Electric Co. Address:
Inventor(s) Name: Matsuyama Takayuki;Onomura Masaaki
Attorney & Agent: wangsi beng
Abstract:
    A nitride semiconductor photogenerator is characterised by including a nitride gallium substrate, and a multilayer film of a nitride semiconductor which is arranged on the nitride gallium substrate and comprises a light emitting layer. The nitride gallium substrate and the multilayer film constitute a light outgoing side end face by the same cleavage face and a light reflection side end face by the same cleavage face. A first film comprising a first protection silicon nitride layer is disposed on the light outgoing side end face, and a second film is installed on the light reflection side end face where a second protection silicon nitride layer, and an oxide layer and a silicon nitride layer which are arranged on the second protection nitride silicon layer, are alternately laminated.
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