Title: Nitride-based semiconductor light emitting diode and method of manufacturing the same
Application Number: 200610140022 Application Date: 2006.10.08
Publication Number: 1945865 Publication Date: 2007.04.11
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00;H01S5/00
Applicant(s) Name: Samsung Electro Mech Address:
Inventor(s) Name: Lee Hyuk M.;Kim Hyun K.;Kim Dong J.;Shin Hyoun S.
Attorney & Agent: liwei
Abstract:
    A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 mum; and an n-electrode pad formed on the n-type nitride semiconductor layer.
Time: 9