Title: Nitride semiconductor light-emitting device and method of manufacture thereof
Application Number: 200610142001 Application Date: 2006.10.08
Publication Number: 1945909 Publication Date: 2007.04.11
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/028;H01S5/343;H01S5/323;H01L33/00
Applicant(s) Name: Sharp K. K. Address:
Inventor(s) Name: Kamikawa Takeshi;Kawaguchi Yoshinobu
Attorney & Agent: taofeng bei
Abstract:
    The present invention provides a nitride semiconductor light-emitting device and method of manufacture the same. The nitride semiconductor light-emitting device comprises: a III-V nitride semiconductor layer; a cavity disposed in the III-V nitride semiconductor layer; and an end face coating film on the end face of the cavity wherein the end face coating film is provided with a film of aluminum oxide on one side of the end face facing the cavity, a separation layer of aluminum nitride with a thickness in the range of 1nm to 20nm between the end face coating film and the end face of the cavity.
Time: 6
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