Title: Method of manufacturing nitride semiconductor device
Application Number: 200610154363 Application Date: 2006.09.22
Publication Number: 1937271 Publication Date: 2007.03.28
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00;H01L21/00;H01S5/00
Applicant(s) Name: Sanyo Electric Co. Address:
Inventor(s) Name:
Attorney & Agent: longchun
Abstract:
    A method of manufacturing a nitride semiconductor device includes the steps of; forming a stripping layer including In on a substrate; forming a nitride semiconductor layer on the stripping layer; causing a decomposition of the stripping layer by increasing a temperature of the stripping layer; irradiating the stripping layer with laser light; and separating the nitride semiconductor layer from the substrate.
Time: 7