Title: Semiconductor epitaxial wafer and its producing method
Application Number: 200610139233 Application Date: 2006.09.20
Publication Number: 1941286 Publication Date: 2007.04.04
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/02;H01L21/20;H01L33/00;H01S5/00
Applicant(s) Name: Hitachi Cable Co., Ltd. Address:
Inventor(s) Name:
Attorney & Agent: zhongjing
Abstract:
    The present invention provides a semiconductor epitaxial wafer and its producing method, when the epitaxial wafer grows on the substrate, it needn not have new protect film forming and eliminating procedure and can maintain clean mirror directional plane. The semiconductor epitaxial wafer consists of substrate (1) of directional plane (2) formed by cleavage and semiconductor epitaxial wafer formed on the said substrate (1), the both ends (2a) of the directional plane (2) of said substrate (1) are covered and hidden by coating parts (15) to a area extending regulate distance toward the medial of said substrate, under this state forming the epitaxial wafer on said substrate (1), under the state of wiping off said coating parts (15) from the substrate, the no growth parts not forming said epitaxial wafer consist in the both ends (2a) of said directional plane (2).
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