Title: High powered semiconductor laser module in high brightness
Application Number: 200610030961 Application Date: 2006.09.08
Publication Number: 1917314 Publication Date: 2007.02.21
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/40;H01S5/024;H01S5/022
Applicant(s) Name: Shanghai Inst of Optics Address:
Inventor(s) Name: Xin Guofeng;Qu Ronghui;Cheng Can;Pi Haoxiang;Chen
Attorney & Agent: zhang zechun
Abstract:
    The semiconductor laser module includes at least one basic encapsulation unit. Being welded on a heat sink of microchannel, P faces of two pieces of semiconductor laser tube core in same basic character are face to face. The said P faces are led out by positive pole of semiconductor laser. N face of tube core is led out by negative pole of semiconductor laser. Insulating pieces separate positive pole, negative pole and heat sink of microchannel. Advantages are: raising output power and output power density about two times, reducing operating voltage, and raising working stability and working life of parts.
Time: 9