Title: Semiconductor laser diode
Application Number: 200610125744 Application Date: 2006.08.29
Publication Number: 1976145 Publication Date: 2007.06.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/065;H01S5/22;H01S5/323;H01S5/343
Applicant(s) Name: Matsushita Electric Industrial Co., Ltd. Address:
Inventor(s) Name: Murasawa Satoshi;Takayama Toru;Kidoguchi Isao
Attorney & Agent: wanghui min
Abstract:
    A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on both sides of the ridge stripe and having a current blocking layer for confining the current in the ridge stripe. A distance from a lower face of the current blocking layer to an upper face of the active layer is within a given range. Also, the current spreads beyond a width of the ridge stripe after passing the ridge stripe and before reaching the active layer. Accordingly, the present invention provides a semiconductor laser diode in which a longitudinal mode can stably keep multi-longitudinal mode oscillation including self sustained pulsation characteristics and good temperature characteristics in a wide temperature range.
Time: 11
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