Title: Nitride semiconductor laser element and method for manufacturing the same
Application Number: 200610121688 Application Date: 2006.08.28
Publication Number: 1921243 Publication Date: 2007.02.28
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01S5/00;H01S5/02;H01S5/028;H01S5/10
Applicant(s) Name: Sharp K. K. Address:
Inventor(s) Name: Kamikawa Takeshi;Kawaguchi Yoshinobu
Attorney & Agent: tao fengbei
Abstract:
    A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the resonator end face is exposed to a plasma atmosphere generated from the gas containing nitrogen gas. When a ratio of nitrogen to gallium in the surface of the resonator end face before the exposure is represented by
Time: 44
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