Title: Zn doped PST film with adjustable dielectric constant and its prepn process
Application Number: 200610154725 Application Date: 2006.11.21
Publication Number: 1974461 Publication Date: 2007.06.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C03C17/22;H01P1/18
Applicant(s) Name: Zhejiang Univ. Address:
Inventor(s) Name: Du Piyi;Zheng Zan;Song Chenlu;Weng Wenjian;han Gao
Attorney & Agent: linfu yu
Abstract:
    The present invention discloses one kind of Zn doped PST film with adjustable dielectric constant and its preparation process. The preparation process includes compounding precursor sol with strontium carbonate, lead acetate, zinc acetate and butyl titanate as material and glacial acetic acid and ethylene glycol monomethyl ether as solvent; coating the sol onto ITO conducting glass, silicon chip or glass substrate through a soaking and drawing process or rotary coating process; and sintering and heat treatment with fast temperature raising and controlled cooling. The technological process of the present invention is simple, low in cost, low in sintering temperature and compatible with semiconductor manufacture process. The prepared Zn doped PST film has high dielectric constant regulating performance and relatively low dielectric loss.
Time: 9
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