Title: Nitride semiconductor device
Application Number: 200610004486 Application Date: 1998.01.08
Publication Number: 1832215 Publication Date: 2006.09.13
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00,H01L31/0304,H01S5/32,H01S5/323
Applicant(s) Name: Nichia Corp. Address:
Inventor(s) Name: Nakamura Shuji, Senoh Masayuki
Attorney & Agent: shen zhaokun
Abstract:
     A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
Time: 7
<- Previous Patent:Nitride semiconductor device   |  Next Patent:Nitride semiconductor device ->