Title: Nitride semiconductor device
Application Number: 200610163962 Application Date: 1998.01.08
Publication Number: 1964094 Publication Date: 2007.05.16
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00;H01S5/323;H01S5/343
Applicant(s) Name: Nichia Corp. Address:
Inventor(s) Name: Nakamura Shuji;Senoh Masayuki;Nagahama Shinichi
Attorney & Agent: zhangxin
Abstract:
    A nitride semiconductor device such as a light emitting device in which an active layer is formed between an n-type semiconductor region consisting of one or more nitride semiconductor layers and a p-type semiconductor region consisting of one or more nitride semiconductor layers, characterized in that at least one of the nitride semiconductor layers of the p-type semiconductor region or the n-type semiconductor region is a super-lattice layer consisting of layer-built 1st layers and 2nd layers made of nitride semiconductors whose compositions are different from each other. By the above mentioned construction, the operating current and operating voltage of the device are lower and the efficiency of the device is improved.
Time: 10
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