Title: Instantaneous annealing equipment for ion-implanted semiconductor
Application Number: 85100131 Application Date: 1985.04.01
Publication Number: 1001906 Publication Date: 1986.07.23
Approval Pub. Date: Granted Pub. Date: 1987.09.02
International Classifi-cation: H01L21/324
Applicant(s) Name: Qinghua Univ. Address:
Inventor(s) Name: Hou Dongyan
Attorney & Agent: LIAO YUANQIU HU LANZHI
Abstract:
     This invention is characterized by using HF to heat graphite blanket and quartz annealing chamber and to fill with blanket gas. In this invention, the temperature rises fastly, the equipment is simple, and it is easy for operation and has a high productivity (over 60 slices per hour). After the annealation the electric-activation efficiency is higher and the drive-in of ions implanted is less. It is suitable not only for manufancturing VLSI with 1um short-channel and devices with shallow P-N junction (0.2 um in depth), but also for annealing the ion implanted compound semiconductor. It can also be used for poly-silicon recrystallization on in sulate layer, for the reflux of phosphorasilicate glass, and for the forming of unfusible metal-siliside and the ohmic junction above the shallow P-N junction.
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