Title: Integrated circuit comprising field defect transistors
Application Number: 85101787 Application Date: 1985.04.01
Publication Number: 1006822 Publication Date: 1987.01.10
Approval Pub. Date: Granted Pub. Date: 1991.01.02
International Classifi-cation: H01L27/06
Applicant(s) Name: N.V. Philips' Gloeilampenfabrieken Address:
Inventor(s) Name:
Attorney & Agent: LI XIANCHUN XIAO JUCHANG
Abstract:
     IC comprises complementary and field effect transistors which belong to normal abort and depletion type transistors. Both of them have a surface layer in the channel section. The surface layers and the source drain section connected thereto are of the same type of conductance. The capacity of impurity per unit surface befween the two surface layers is at least equal to the quantity of electric charge per unit surface on the two substrate sections linked separately with the two surface layers. If a gate voltage value is added between the gate electrode and source drain section, the surface layer will be depleted. The gate electrode is made up with the semiconducting materials of converse conductance type.
Time: 15