Title: Method of mfg.semiconductor devices in which material is deposited from a reaction gas
Application Number: 85102326 Application Date: 1985.04.01
Publication Number: 1007282 Publication Date: 1987.01.17
Approval Pub. Date: Granted Pub. Date: 1989.07.05
International Classifi-cation: H01L21/205
Applicant(s) Name: N.V. Philips' Gloei/ampenfabrieken Address:
Inventor(s) Name: Thijssen, Uijen
Attorney & Agent: WU BINGFENG XIAO CHUNJING
Abstract:
     In the method a number of slices of semiconductor material are heated in a reactor tube arranged inside a furnace tube and having a tube wall which is provided with openings, through which a reaction gas is passed for depositing a semiconductor material. This is effected by producing in the furnace tube a flow of the reaction gas along the outer side of the wall of the reactor tube and by passing only a part of this flow through the openings into the reactor tube. By the use of this method, it is prevented that particles of different size and composition-which may be formed in the reaction gas-are deposited on the slices.
Time: 6
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