Title: High antijamming HP-MOS IC serias
Application Number: 85102308 Application Date: 1985.04.01
Publication Number: 1003374 Publication Date: 1986.09.17
Approval Pub. Date: Granted Pub. Date: 1989.11.08
International Classifi-cation: H01L27/04
Applicant(s) Name: Zhengzhou Univ. Address:
Inventor(s) Name:
Attorney & Agent: WANG FENG
Abstract:
     The IC has a noise margin which is close to the ideal value. Its antijamming performance is better than that of C-Mos and HTL. When a proper capacitor is connected with it, its antijamming performance may be as good as that of a relay. It can be used in electronic equipments for industrial control and in inteface circuits of microcomputers to reduce the costs of these equipments and increase their reliability.
Time: 7
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