Title: Method of mfg. silicon semiconductor device with subsiding oxide layer in partial area
Application Number: 85101827 Application Date: 1985.04.01
Publication Number: 1006818 Publication Date: 1987.01.10
Approval Pub. Date: Granted Pub. Date: 1989.10.25
International Classifi-cation: H01L21/02,H01L21/76,H01L21/94
Applicant(s) Name: N.V. Philips Gloeilampenfarieken Address:
Inventor(s) Name:
Attorney & Agent: XIAO CHUNJING
Abstract:
     After the first oxide masking, a subsiding area is formed on the surface of a silicon chip. Its extension on both side faces is under the 1st oxide masking. After the 2nd oxide masking, the sidefaces are oxide coating. According to this invention the side faces of the subsiding area are flat. An angle of 25 deg. - 45 deg. is formed between the side faces and the original surface. The 2nd oxide masking forms a layer of 5-50nm silicon nitride or silicon oxynitride on the two side faces. Silicon oxide with thickness less than 5nm can also be used here as a separating layer. A flat structure is obtained with this method.
Time: 5
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