Title: Indirect coupling silicon photosensor
Application Number: 85100228 Application Date: 1985.04.01
Publication Number: 1003571 Publication Date: 1986.09.24
Approval Pub. Date: Granted Pub. Date: 1988.01.27
International Classifi-cation: H01L31/10
Applicant(s) Name: Wuhan Univ. Address:
Inventor(s) Name:
Attorney & Agent: GONG MAOMING
Abstract:
     In the rilicon photorensor using the planar procers, diodes. transistors and other electronic devices are derictly made on a P-N junction accepeting incident light. (shortly as "photorensitive P-N junction") The method described above may be known as the direct coupling photorensitive P-N junction with electronic devices. Since the dimensious of photorensitive P-N junction in prior art is larger, both the electric parameters of photorensor and the rate of finished products are lower. In this invention the transverse injection effect may be used with an open P-N junction illustrated by light so as to realize indirect coupling photorensitive P-N junction with electronic devices. Not only may the defects mentioned above be overcome but also the way may be opened on manufacturing new type of photorensor with higher breakdown voltage and lower dark current.
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