Title: Process for passivating mesa semiconductor devices with glass
Application Number: 85100410 Application Date: 1985.04.01
Publication Number: 1001540 Publication Date: 1986.07.09
Approval Pub. Date: Granted Pub. Date: 1988.03.02
International Classifi-cation: H01L21/316
Applicant(s) Name: Shandong Normal Univ. Address:
Inventor(s) Name: Liu Ruilan, Tian Shufen, Xue Chengshan, Zhao Fuxia
Attorney & Agent: LI RONGSHENG
Abstract:
     In this process, the electrophoretic method used aluminium nitrate as the electrolyte is applied to put the glass powder into grooves on stepped P-N junction mesa and the glass powder is then melt in a sintering furnace under pure exygen atmosphere. The glass-passivation-layers made by this process have bright and clean surface and no bubble inside. The thickness of the layer is uniform and controllable. Therefore, the electric properties of mesa semiconductor devices can be raised on reliability, stability and strength for voltage-resisting.
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