Title: Reflective cavity of semiconductor light-emitting device and its technology
Application Number: 85100503 Application Date: 1985.04.01
Publication Number: 1003375 Publication Date: 1986.09.17
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L33/00
Applicant(s) Name: Shanghai Institute of Metallurgy, Chinese Academia Address:
Inventor(s) Name:
Attorney & Agent: JI LIANGJIU
Abstract:
     The Monocrystalline silicon has the characteristic of anisotropic corrosion. Making use of this property, various kinds of cuboidal and rectangular cone reflective cavities are formed on the (100) plane of monocrystalline silicon. Followed by coating a layer of metal (for example, Au, Ag, Al etc.) as the mirror, a variety of LED indication lamps, numeral lights, character displays of 5X7 dot matrix and LED arrays tec. can be manufactured. This invention of cavity-making technology is consistent with that of general semiconductor devices. Using the LED devices manufactured with this cavity, the light output is increased and the emitting efficiency is enhanced.
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