Title: Radio frequency sputtering method for manufacturing semiconductor compound thin film
Application Number: 85100504 Application Date: 1985.04.01
Publication Number: 1002369 Publication Date: 1986.08.13
Approval Pub. Date: Granted Pub. Date: 1992.02.12
International Classifi-cation: C23C14/34,H01L21/203
Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Aczdemy of S Address:
Inventor(s) Name:
Attorney & Agent: JI LIANGJIU
Abstract:
     This invention relates to a method for manufacturing 3-V compound semiconductor thin film of high steam pressure component. Intending the sputtering film to have a better stoichiometric ratio, this invention adopts combined 3-V compound block or fragments with relevant high steam pressure crystalline or polycrystalline or non-crystalline 3-V compound semiconductor thin film can be manufactured with different substrate temperature.
Time: 12