Title: Method of dopping non-crystalline silicon with airborne dopant
Application Number: 85100512 Application Date: 1985.04.01
Publication Number: 1002370 Publication Date: 1986.08.13
Approval Pub. Date: Granted Pub. Date: 1990.12.26
International Classifi-cation: H01L21/205
Applicant(s) Name: Shanghai Inst. of Silicate, Chinese Academy of Sci Address:
Inventor(s) Name: Shen Yuehua
Attorney & Agent: PAN ZHENSU
Abstract:
     This invention takes simple substance or compound of 3-V elements in the periodic table as a dopant, which will mix and react with SiH4 in reaction chamber to produce the doped non-crystalline silicon, as the purified H or He or Ar, as the carrier, flows through them which is heated to vaporization.The doped non-crystalline silicon has advantages of less toxicity, low defect states density of the doping material and augmented photoconduction.
Time: 6