Title: Non-crystalline silicon camera target
Application Number: 85100514 Application Date: 1985.04.01
Publication Number: 1002365 Publication Date: 1986.08.13
Approval Pub. Date: Granted Pub. Date: 1993.03.31
International Classifi-cation: H01J9/20,H01J29/10,H01L21/205
Applicant(s) Name: Shanghai Inst. of Silicate, Chinese Academy of Sci Address:
Inventor(s) Name: Shen Yuehua
Attorney & Agent: PAN ZHENSU
Abstract:
     This non-crystalline silicon camera target relates to a new type camera tube. The camera target, with high sensitivity and of simple process, is manufactured by doping the non-crystalline silicon with the airborne dopant P, BBr3, In or Ga to make the hole barrier and photoconductive layer separately. This less-inertia camera target, with the target dark current produced as a result not including an electron barrier layer, can be used under high ambient temperature.
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