Title: Hot-wall sealed low-temp-pressure silicon dioxide thin-film deposition technology
Application Number: 94112298 Application Date: 1994.09.02
Publication Number: 1104264 Publication Date: 1995.06.28
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C23C16/40,H01L21/31
Applicant(s) Name: Fudan Univ., Fudan Univ. Address: 200433
Inventor(s) Name: Wang Jitao, Xie Shengqi, Wang Jitao
Attorney & Agent: YAO JINGFANG
Abstract:
     The present invention relates to a technique for depositing silicon-dioxide film by using low-temp,. low-pressure hot-wall closed packing method. The silicon-dioxide film deposited by using existent technique is bad in step covering property, poor in deep-hole filling power and low in furnace yield. Said invention uses ozone and ortho-silicate as raw materials, and its reaction temp. is 150-550 deg.C, gas pressure is 10-103 Pa, and 5-150 silicon chips to be deposited can be placed in a reaction tube, and then the reaction tube is placed in a heating furnace to form hot-wall. The invented silicon-dioxide film is good in properties and its production efficiency is high.
Time: 12